N沟道增强型MOSFET
| 产品描述 | N沟道增强型MOSFET |
| 品牌 | onsemi |
| 定价锚 | LCSC-RMB |
| 品牌(原厂) | onsemi |
| 封装 | TO-252-2L |
| 分类 | MOSFETs |
| 整包装 | 2500 个 |
| 立创编码 | C903573 |
| Operating Temperature | -55℃~+150℃ |
| Input Capacitance(Ciss) | 1.11nF |
| Number | 1 N-channel |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Gate Charge(Qg) | 23nC@30V |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF |
| Current - Continuous Drain(Id) | 30A |
| Drain to Source Voltage | 60V |
| Pd - Power Dissipation | 50W |
| RDS(on) | 32mΩ@6V |